发明名称 |
Method and apparatus for making air gap insulation for semiconductor devices |
摘要 |
A method and apparatus for creating air gaps to act as insulators within a semiconductor die. Wires, support structures, and sacrificial structures are constructed from vias and trenches. A top layer die is subdivided so that spaces reside between each adjacent subsection. The air gaps are created by etching the sacrificial structures via allowing etchant to seep through the spaces between subsections. After the air gaps have been created, the spaces residing between the subsections are sealed.
|
申请公布号 |
US2002145201(A1) |
申请公布日期 |
2002.10.10 |
申请号 |
US20010681437 |
申请日期 |
2001.04.04 |
申请人 |
ARMBRUST DOUGLAS SCOTT;CHAPPLE-SOKOL JONATHAN DANIEL;STAMPER ANTHONY KENDALL |
发明人 |
ARMBRUST DOUGLAS SCOTT;CHAPPLE-SOKOL JONATHAN DANIEL;STAMPER ANTHONY KENDALL |
分类号 |
H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L23/48 |
主分类号 |
H01L21/768 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|