| 摘要 |
<p>To improve the effective aperture ratio of a pixel, achieve higher sensitivity, and to realize higher definition without causing the degradation of performance of gate wiring, a signal line, and a switching TFT that are indispensable in constructing a pixel. A photodetecting device is provided, in which a plurality of pixels including photoelectric conversion elements that convert incident light into electrical signals are formed on a substrate, in which wiring connected to the pixels including the photoelectric conversion elements is arranged on an insulating layer, which has been formed so as to cover the substrate and the photoelectric conversion element, and on a space between at least two adjacent photoelectric conversion elements. <IMAGE></p> |
