| 摘要 |
PURPOSE: A semiconductor memory device and a method for buffering an input signal thereof are provided to accurately change a signal level applied from outside into an internal signal level when an instruction word, a clock signal, an address and data applied from outside have a signal level different to each other. CONSTITUTION: A semiconductor memory device includes a predetermined number of reference voltage generation blocks(10,30,34) for generating a predetermined number of reference voltages different to each other by inputting an external voltage power and a number of input buffer blocks(12,14,32,36) being correspond to a preset number of input signal groups so as to buffer by input a multiple number of input signals respective to a preset number of input signal groups different from each other applied from outside and a reference voltage corresponding to each of the multiple number of input signal groups among the predetermined number of reference voltages. Therefore, when an instruction word, a clock signal, an address and data applied from outside have a signal level different from each other, the semiconductor memory device accurately changes a signal level applied from outside into an internal signal level.
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