| 摘要 |
The invention relates to a memory cell that has a trench. A trench capacitor is configured in the trench. In addition, a vertical transistor is formed in the trench, above the trench capacitor. To connect the gate material of the vertical transistor to a word line, a dielectric layer (12) having an internal opening (13) is provided in the trench (3) above the gate material (23). The dielectric layer is in the form of a dielectric ring. The dielectric ring allows self-aligned connection of the word line to the gate material of the vertical transistor.
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