METHOD OF FORMING RESIST PATTERN, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of forming a resist pattern, by which the dimension of a resist pattern can be reduced with high dimensional controllability, regardless of the roughness and denseness of the pattern, and to provide a method of manufacturing a semiconductor device using the method. SOLUTION: At heat treatment on the resist pattern for adjusting the dimension of the pattern after the pattern has been formed by lithography, heat treatment is performed at a temperature T1( deg.C), which falls within the range of T2( deg.C) to T+4 deg.C (where T2 is the softening temperature of the resist forming the pattern). Alternatively, the heat treatment is divided into a first heat treatment, which is performed at a temperature T3( deg.C) (T3=T2). Still alternatively, the heat treatment is performed, by continuously making the temperature change from the temperature T3( deg.C) (T3=T2).