SEMICONDUCTOR DEVICE AND EQUIPMENT FOR COMMUNICATION SYSTEM

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device of low power consumption and high breakdown voltage and equipment for a communication system using it by mitigating the tradeoff of breakdown voltage increase and resistance reduction. SOLUTION: An HEMT is provided with an InAlAs layer 202, an InGaAs layer 203, a multiplexδdoped InAlAs layer 204 composed by alternately laminating an n-type doped layer 204a and an undoped layer 204b, an InP layer 205, a Schottky gate electrode 210, a source electrode 209a, and a drain electrode 209b on an InP substrate 201. When a current flows through a region (channel region) near the boundary with the multiplexδdoped InAlAs layer 204 inside the InGaAs layer 203, while reducing resistance to the movement of carriers passing through the multiplexδdoped InAlAs layer 204 which is a carrier supply layer, the breakdown voltage at the time of off-state is increased.