发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To eliminate change in resistance of a metal wiring layer, by providing a sealing glass layer, which is located on a part of the metal wiring layer and fixes a ceramic base material and a cap member, and providing a barrier layer comprising oxide ceramics between the metal wiring layer and the sealing glass layer. CONSTITUTION:A barrier layer 10 comprising oxide ceramics is formed between a metal wiring layer 4 and a sealing glass layer 7 including a contact boundary part 9. The oxide ceramics such as Al2O3 is used for the barrier layer 10 in order to shield the diffusion of the glass component from the glass layer 7 and to maintain adhesion with the glass layer. The barrier layer 10 is uniformly formed on a ceramic base material 1 of a glass sealing part and on the metal wiring layer 4. Thus, the diffusion of the glass component from the sealing glass layer to the metal wiring layer can be prevented. Increase in electric resistance at the contact boundary part of the metal wiring layer can be eliminated. Change in resistance of the metal wiring layer during the manufacturing and inspecting processes can be eliminated.
申请公布号 JPS62193156(A) 申请公布日期 1987.08.25
申请号 JP19860036238 申请日期 1986.02.19
申请人 SUMITOMO ELECTRIC IND LTD 发明人 KANEHIRO KAZUO;IGARASHI TADASHI;MAEDA TAKAO
分类号 H01L23/10;H01L23/498 主分类号 H01L23/10
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