ALIGN MARK FORMATION METHOD FOR THIN FILM PATTERN ALIGN

摘要

PURPOSE: An align mark formation method is provided to improve a product reliability by minimizing an align deviation and by preventing alignment defects. CONSTITUTION: The first metal layer(120) is formed on a thin film pattern(100) having an active region and a scribe line region. After patterning a photoresist, the first groove is formed on the first metal layer(120) by etching using the photoresist pattern as a mask. Then, a transparent interlayer dielectric(130) is deposited on the resultant structure. At this time, the interlayer dielectric(130) completely filled into the groove become SPM11. After performing an align using the first light, a contact hole on the active region and a number of second grooves(139) on the scribe line region are formed on the interlayer dielectric(130). Then, the second metal layer(140) is formed on the resultant structure. At this time, convexes having a symmetric shape with respect to the second grooves are formed on the upper portion of the second grooves(139).