| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem that when the quantity of current of illumination electron beam is set at a high level in order to obtain a high throughput while shortening the exposure time, aberration due to spatial charge effect caused by self interaction of electron beam is increased to deteriorate resolution and the seam accuracy of pattern deteriorates between small adjacent regions due to distortion of a transfer image, and since that problem occurs similarly when any one of method shown of Fig.6 and 7 is employed, the quantity of illumination current must be limited and thereby throughput is limited in the fabrication of semiconductor element. SOLUTION: The charged particle beam exposing system comprises an illumination optical system for illuminating on a mask with a charged particle beam, and a projection optical system for transferring the pattern of a mask illuminated by the illumination optical system onto a sensitive substrate. The profile of an illumination charged particle beam comprises a set of ring bands or approximately concentric circular figures or a set of figures approximately forming a part of concentric circles, and the mask can be scanned with the illumination charged particle beam through a deflection means.
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