METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for fabricating a semiconductor device, in which generation of defectives are suppressed by stabilizing etching property. SOLUTION: The semiconductor device is produced by forming contact hole on the insulation film on a patterned silicon substrate using an semiconductor fabricating equipment having at least a reaction chamber for generating plasma. The plasma comprised of argon and oxygen is generated (step S1) in the reaction chamber of the semiconductor fabricating equipment before a contact hole (step S3) in the insulation film on the semiconductor substrate is formed.