Method for fabricating a nonvolatile semiconductor memory cell

摘要

A method for producing a nonvolatile semiconductor memory cell, that includes producing a floating gate in a self-aligning manner using standard processes. The use of TiO2 or WOx as the dielectric layer between the control gate and the floating gate results in a sufficiently high capacitive coupling factor, so that it is possible to fabricate a semiconductor memory cell of very small dimensions.