| 摘要 |
PURPOSE: An isolation region of a semiconductor high voltage device is provided to prevent an inversion region caused by minority carriers from being formed under a field oxide layer, by forming a poly electrode of the field oxide layer when a gate electrode is formed without performing an additional process or increasing the area of the isolation region. CONSTITUTION: An active region and a field region are defined in a substrate. The first conductive well(42) to which a ground voltage is applied is formed in the substrate including the active region. A high density body contact region(44) of the first conductivity type is formed in the first conductive well, isolated from the active region. A field insulation layer is formed in the field region. A transistor having a source/drain and a gate electrode(45a,45b) is formed in each active region. A semiconductor electrode is formed on the filed insulation layer between the adjacent active regions while the gate electrode is formed. A ground voltage applying electrode(48a) is in contact with the source or drain in one portion of the active region. A high voltage applying electrode(48b) connects the source or drain in the other portion of the active region with the gate electrode in the active region adjacent to the source/drain. A body contact electrode(48c) connects the semiconductor electrode with the body contact region.
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