发明名称 |
Electroless metal liner formation methods |
摘要 |
A semiconductor structure, having a semiconductor dielectric material having an opening. A first material lining the opening, the first material comprising MXY, where M is selected from the group consisting of cobalt and nickel, X is selected from the group consisting of tungsten and silicon and Y is selected from the group consisting of phosphorus and boron and a second material filling the lined dielectric material.
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申请公布号 |
US2002081842(A1) |
申请公布日期 |
2002.06.27 |
申请号 |
US20000549907 |
申请日期 |
2000.04.14 |
申请人 |
SAMBUCETTI CARLOS J.;BOETTCHER STEVEN H.;LOCKE PETER S.;RUBINO JUDITH M.;SEO SOON-CHEON |
发明人 |
SAMBUCETTI CARLOS J.;BOETTCHER STEVEN H.;LOCKE PETER S.;RUBINO JUDITH M.;SEO SOON-CHEON |
分类号 |
H01L21/288;H01L21/3205;H01L23/52;H01L23/522;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/288 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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