发明名称 |
Thin film transistor for supplying power to element to be driven |
摘要 |
An EL element (50) having an organic emissive layer or the like between the anode and cathode is used as an element to be driven, and an element driving TFT (20) for controlling the current supplied to the EL element (50) and a compensation thin film transistor (30) having an opposite conductive characteristic as the element driving TFT (20) are provided between the EL element (50) and the power supply line VL. With this structure, variation in the current supplied to each EL element (50) is reduced.
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申请公布号 |
US2002074580(A1) |
申请公布日期 |
2002.06.20 |
申请号 |
US20010965937 |
申请日期 |
2001.09.28 |
申请人 |
ANZAI KATSUYA;KOMIYA NAOAKI |
发明人 |
ANZAI KATSUYA;KOMIYA NAOAKI |
分类号 |
H01L51/50;G09F9/30;G09G3/20;G09G3/30;G09G3/32;H01L21/20;H01L21/336;H01L27/08;H01L27/32;H01L29/786;H05B33/00;(IPC1-7):H01L31/062 |
主分类号 |
H01L51/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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