| 摘要 |
PROBLEM TO BE SOLVED: To simplify the fabrication process of a constriction type LED by decreasing the number of times of epitaxial growth process, and to prevent overetching of an underlying layer at the time of removing the constriction layer partially by etching. SOLUTION: An emission layer, a current diffusion layer and a current constriction layer 1 are grown in this order on a growth substrate. When the current diffusion layer is composed of (AlxGa1-x)yIn1-yP (0<=x<=1, 0<=y<=1) and the current constriction layer is composed of AlzGa1-zAs (0<=z<=1), overetching of the current diffusion layer can be prevented effectively at the time of removing the constriction layer 1 partially by etching. |
