发明名称 |
Semiconductor device with metal peripheral area |
摘要 |
A semiconductor device having a metal layer at the peripheral area surrounding an element forming area formed on a semiconductor substrate. This metal layer may be connected to the grounding potential or the power potential. The peripheral area is a scribing line area for example. The metal layer may be formed simultaneously with the formation of a bump within the element forming area.
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申请公布号 |
US6404040(B1) |
申请公布日期 |
2002.06.11 |
申请号 |
US20000497157 |
申请日期 |
2000.02.03 |
申请人 |
ROHM CO., LTD |
发明人 |
HIKITA JUNICHI;NAKAGAWA YOSHIKAZU;KUMAMOTO NOBUHISA |
分类号 |
H01L21/301;H01L21/60;H01L23/485;H01L23/50;H01L25/065;H01L25/07;H01L25/18;(IPC1-7):H01L23/58 |
主分类号 |
H01L21/301 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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