发明名称 Substrate processing apparatus and substrate processing method
摘要 Thermal processing unit sections each with ten tiers and coating processing unit sections each with five tiers are disposed around a first main wafer transfer section and a second main wafer transfer section, and in the thermal processing unit section, the influence of the time required for substrate temperature regulation processing on a drop in throughput can be reduced greatly by transferring the wafer W while the temperature of the wafer W is being regulated by a temperature regulation and transfer device.
申请公布号 US6402401(B1) 申请公布日期 2002.06.11
申请号 US20000688140 申请日期 2000.10.16
申请人 TOKYO ELECTRON LIMITED 发明人 UEDA ISSEI;HAYASHI SHINICHI;IIDA NARUAKI;MATSUYAMA YUJI;DEGUCHI YOICHI
分类号 H01L21/02;G07C9/00;G08G3/00;H01L21/00;H01L21/677;(IPC1-7):G03D5/00 主分类号 H01L21/02
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