发明名称 |
Field effect transistor with reduced gate delay and method of fabricating the same |
摘要 |
A transistor formed on a substrate comprises a gate electrode having a lateral extension at the foot of the gate electrode that is less than the average lateral extension of the gate electrode. The increased cross-section of the gate electrode compared to the rectangular cross-sectional shape of a prior art device provides for a significantly reduced gate resistance while the effective gate length, i.e., the lateral extension of the gate electrode at its foot, may be scaled down to a size of 100 nm and beyond. Moreover, a method for forming the field effect transistor described above is disclosed.
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申请公布号 |
US2002056859(A1) |
申请公布日期 |
2002.05.16 |
申请号 |
US20010847622 |
申请日期 |
2001.05.02 |
申请人 |
HORSTMANN MANFRED;STEPHAN ROLF;WIECZOREK KARSTEN;KRUEGEL STEPHAN |
发明人 |
HORSTMANN MANFRED;STEPHAN ROLF;WIECZOREK KARSTEN;KRUEGEL STEPHAN |
分类号 |
H01L21/28;H01L29/423;H01L29/49;(IPC1-7):H01L21/336;H01L27/148 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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