发明名称 SEMICONDUCTOR DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide a semiconductor device that has an anti fuse program circuit capable of intercepting a current after blowing. SOLUTION: A signal SA is activated and a node N1 is set to an L level. Then, by setting a potential Vpgm at a high potential, the anti fuse 32 becomes conductive. Because the potential of the node N1 becomes a power supply potential Vcc by reversing a latch 40, a transistor 34 becomes non-conductive, and thus the current flowing through the anti fuse 32 is intercepted.</p>
申请公布号 JP2002134620(A) 申请公布日期 2002.05.10
申请号 JP20000328533 申请日期 2000.10.27
申请人 MITSUBISHI ELECTRIC CORP;MITSUBISHI ELECTRIC ENGINEERING CO LTD 发明人 TANIZAKI HIROAKI;HIDAKA HIDETO;OISHI TSUKASA;TOMISHIMA SHIGEKI;KATO HIROSHI
分类号 G11C17/14;G11C11/401;G11C17/16;G11C17/18;G11C29/04;H01L21/82;H01L27/10;H03K19/096;(IPC1-7):H01L21/82;G11C29/00 主分类号 G11C17/14
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