| 摘要 |
<p>PROBLEM TO BE SOLVED: To minimize damages generated, when a substrate is removed from an electrostatic chuck by rapidly and completely destaticizing the substrate to be treated after treating the substrate, in a method for manufacturing a semiconductor device using the chuck. SOLUTION: The electrostatic chuck 100 has a structure for sandwiching an electrode 101 between insulating layers 103, and the insulation layer is made of a sintered material of AlN.TiC or the like having a volume resistivity of 1010Ω.cm or less. The method for manufacturing the semiconductor device comprises the steps of forming an insulating film on the substrate 105 to be treated and electrostatically attracted, releasing the electrostatic attraction, raising the substrate from the chuck by a pusher pin 106, in the presence of plasma.</p> |
