| 摘要 |
A non-volatile ferroelectric capacitor memory of the present invention comprises a plurality of word lines located in parallel to each other, a plurality of bit lines across the word lines, a plurality of sensing ferroelectric capacitor connected to ground, a plurality of output transistors, and a plurality of memory cells located at intersections between each word line and bit line. In each of the memory cells including a depletion field effect transistor and a ferroelectric capacitor, the first electrode plate of the ferroelectric capacitor is connected to the depletion field effect transistor and the second electrode plate is connected to the bit line, and the gate electrode of the depletion field effect transistor is connected to the bit line.
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