发明名称 Silicon dioxide deposition by plasma activated evaporation process
摘要 A method for coating a plastic substrate with an abrasion resistant metal oxide layer which includes placing the plastic substrate in a vacuum chamber, forming a vacuum in the chamber, conducting electron beam evaporation of an oxide-forming metal or a metal oxide in the vacuum chamber, passing the evaporated metal or metal oxide into an argon plasma into which oxygen and nitrous oxide has been passed, and, exposing the plastic substrate to the plasma, whereby the abrasion resistant layer is deposited on an exposed surface of the substrate.
申请公布号 US6379757(B1) 申请公布日期 2002.04.30
申请号 US19990354258 申请日期 1999.07.15
申请人 GENERAL ELECTRIC COMPANY 发明人 IACOVANGELO CHARLES DOMINIC
分类号 C23C14/06;C23C14/10;C23C14/32;C23C16/42;C23C16/50;H01L21/31;(IPC1-7):H05H1/24 主分类号 C23C14/06
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