MANUFACTURING METHOD OF SEMICONDUCTOR SUBSTRATE, THE SEMICONDUCTOR SUBSTRATE, ELECTRO-OPTICAL DEVICE, AND ELECTRONIC APPLIANCE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor substrate, whereby a single-crystal semiconductor substrate having different thicknesses from each other corresponding to its portions can be formed, in the semiconductor substrate of SOI structure. SOLUTION: The manufacturing method of the semiconductor substrate includes a process for forming an insulation film 2 on a single-crystal semiconductor substrate 1, a process for providing an ion-shielding material 3 on the insulation film 2, a process for implanting ions into the semiconductor substrate 1 from the side of the insulation film 2 to form ion-implanted layers 1a, 1b a process for bonding the semiconductor substrate 1 to a support substrate 5, and a process for peeling off the semiconductor substrate 1 therefrom, to leave the ion-implanted layers 1a, 1b as they are.