发明名称 Light emitting device and fabricating method thereof
摘要 The present invention provides an inexpensive light emitting device and an inexpensive electric appliance. By reducing the number of photolithography steps in the fabrication of TFTs, the yield of the light emitting devices can be enhanced and the manufacturing period can be shortened. The present invention is substantially characterized in that a gate electrode is formed of a conductive film made of a plurality of layers and the concentration of impurity regions formed in the inside of an active layer can be adjusted by making use of the selection ratio at the time of etching these layers.
申请公布号 US2002048829(A1) 申请公布日期 2002.04.25
申请号 US20010837324 申请日期 2001.04.19
申请人 YAMAZAKI SHUNPEI;FUKUNAGA TAKESHI;KOYAMA JUN;INUKAI KAZUTAKA 发明人 YAMAZAKI SHUNPEI;FUKUNAGA TAKESHI;KOYAMA JUN;INUKAI KAZUTAKA
分类号 H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/423;H01L29/49;(IPC1-7):H01L21/66;H01L21/00 主分类号 H01L21/336
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