发明名称 Method of manufacturing semiconductor substrate, semiconductor substrate, electro-optical apparatus and electronic equipment
摘要 A method of manufacturing a semiconductor substrate (7) includes the processes of: forming an insulation film (2) on a surface of a semiconductor substrate main body (1); forming an ion shield member (3) having a predetermined shape on the insulation film; implanting an ion into the semiconductor substrate main body from a side on which the insulation film is formed, to thereby form an ion implantation layer (1a, 1b); removing the ion shield member; laminating the insulation film and a support substrate (5) onto each other; and separating the semiconductor substrate main body from the support substrate at a portion of the ion implantation layer.
申请公布号 US2002047159(A1) 申请公布日期 2002.04.25
申请号 US20010970766 申请日期 2001.10.05
申请人 SEIKO EPSON CORPORATION 发明人 YAMAZAKI YASUSHI;HIRABAYASHI YUKIYA
分类号 G02F1/1333;G02F1/136;G02F1/1368;G09F9/00;G09F9/30;H01L21/02;H01L21/336;H01L21/762;H01L21/77;H01L21/84;H01L27/12;H01L29/786;(IPC1-7):H01L27/01 主分类号 G02F1/1333
代理机构 代理人
主权项
地址
您可能感兴趣的专利