发明名称 |
Method of manufacturing semiconductor substrate, semiconductor substrate, electro-optical apparatus and electronic equipment |
摘要 |
A method of manufacturing a semiconductor substrate (7) includes the processes of: forming an insulation film (2) on a surface of a semiconductor substrate main body (1); forming an ion shield member (3) having a predetermined shape on the insulation film; implanting an ion into the semiconductor substrate main body from a side on which the insulation film is formed, to thereby form an ion implantation layer (1a, 1b); removing the ion shield member; laminating the insulation film and a support substrate (5) onto each other; and separating the semiconductor substrate main body from the support substrate at a portion of the ion implantation layer.
|
申请公布号 |
US2002047159(A1) |
申请公布日期 |
2002.04.25 |
申请号 |
US20010970766 |
申请日期 |
2001.10.05 |
申请人 |
SEIKO EPSON CORPORATION |
发明人 |
YAMAZAKI YASUSHI;HIRABAYASHI YUKIYA |
分类号 |
G02F1/1333;G02F1/136;G02F1/1368;G09F9/00;G09F9/30;H01L21/02;H01L21/336;H01L21/762;H01L21/77;H01L21/84;H01L27/12;H01L29/786;(IPC1-7):H01L27/01 |
主分类号 |
G02F1/1333 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|