摘要 |
<p>A method for enhancing the material removal rate of an upper layer of a wafer in chemical mechanical planarization (CMP) systems (200a) is provided. The method includes applying radiation to an amount of slurry (218) before the slurry (218) is applied to the upper layer of the wafer (202). In one example, the method also includes providing a polishing pad (208) and a carrier head configured to hold the wafer (202). The method further includes creating a mechanical polishing interface between the polishing pad (208), the upper layer of the wafer, and the radiation exposed slurry (218) by bringing the polishing pad (208) and the carrier head into contact.</p> |