| 摘要 |
PROBLEM TO BE SOLVED: To stably manufacture a MOS transistor which will not produce hump phenomenon by stably suppressing the occurrence of the recesses of the end of a trench element isolation region. SOLUTION: A pad oxidation film 2 and a nitriding silicon film 3 are formed on a silicon substrate 1, a trench 4 is formed by dry etching to make the nitriding silicon film 3 an etching mask, further the nitriding silicon film 3 is made an oxidation mask to thermally oxidize the silicon substrate 1, and a reforming layer formed on the surface of the nitriding silicon film 3 is removed by a neutral radical containing fluorine in a thermal oxidation process. After the reforming layer has been removed, the surface of the nitriding silicon film 3 is etched in a prescribed amount of film thickness, after the nitriding silicon film 3a has been formed, an embedded insulation film is deposited in entirety so as to fill the trench 4, the nitriding silicon film 3a is embedded as a polishing stopper, and the embedded insulation film is polished chemically and mechanically, to form a trench element isolation insulator 8.
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