METHOD FOR PRODUCING AN ALUMINUM-SILICON CARBIDE SEMICONDUCTOR SUBSTRATE THE SAME

摘要

An object of the present invention is to provide a lowcost semiconductor substrate made of an aluminum-silicon carbide (Al-SiC) composite material that has excellent thermal performance and that is capable of maintaining high dimensional accuracy and stability when practically used while coping with the flow of rapid diversification of a practical shape. Another object is to provide a package that can mount a semiconductor element that uses the substrate, and provide a semiconductor device that uses the substrate. In an aluminum-silicon carbide (Al-SiC) semiconductor substrate whose first component is a metal chiefly composed of aluminum (Al) and whose second component is silicon carbide (SiC), the second component is compositionally 5 to 60% by weight of the whole and the remainder is the first component, and a warp in the direction of its main surface is 3 mu m/mm or less.