| 摘要 |
PURPOSE: A photoresist pattern formation method is provided to improve an overlay margin by sampling a wafer using a global alignment. CONSTITUTION: After coating a first photoresist layer on a sample wafer(22), a global alignment correction value is calculated(23), the first photoresist layer is exposed by using the calculated correction value(24), and an overlay accuracy is inspected(25). Then, a second photoresist layer is coated on the resultant structure(27). The second photoresist layer is exposed by using the optimum alignment conditions, thereby forming a photoresist pattern(28).
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