MANUFACTURING METHOD OF STRAIN SiCMOS STRUCTURE USING Si SELECTIVE EPITAXIAL DEPOSITION AFTER DEVICE SEPARATION

摘要

PROBLEM TO BE SOLVED: To provide a strain SiCMOS device for which a strain Si layer will not be affected by a hot process step. SOLUTION: The SiCMOS structure is formed by the steps which include a step where a relaxing SiGe layer is formed on a substrate surface, a step where a separation region and a well implanting region are formed in the relaxing SiGe layer, and a step where a strain Si layer is formed on the relaxing SiGe layer. These process steps are used together with a conventional gate process step, when a strain MOSFET structure is formed.