| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for semiconductor device, capable of easily controlling the stop of wet etching on the n-layer side of pn bonding. SOLUTION: A semiconductor wafer, with which a p-type Ga0.5Al0.5As film 22 (film thickness 200 nm) and an n-type Ga0.35Al0.65As film 23 (film thickness 600 nm) are laminated on a body 21 of n-type GaAs (100) substrate, is immersed in an etching liquid and irradiated with light, containing the component of wavelength 500-620 nm with a light intensity of 50-100 mW/cm2.
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