发明名称 SYSTEM AND METHOD FOR CHARGED PARTICLE BEAM EXPOSURE AND METHOD OF MANUFACTURING DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a charged particle beam exposure system that can suppress a decline in pattern transferring accuracy. SOLUTION: When the moving sequence of a reticle stage 11 or wafer stage 24 is changed or a reticle 10 is replaced with another reticle, the time required for feeding the stage 11 or 24 for thoroughly performing pattern transferring operation is measured by actually performing stage feeding operation. The operational schedule of each stage 11 and 24 and a charged particle beam optical system (a deflector 16, a contrast opening 18, etc.), is decided based on the actually measured time. Based on the schedule, control sections (stage control sections 11a and 24a, a coil power source control section 16a, etc.), respectively control the stages 11 and 24 and the charged particle beam optical system.
申请公布号 JP2002075848(A) 申请公布日期 2002.03.15
申请号 JP20000266582 申请日期 2000.09.04
申请人 NIKON CORP 发明人 KANEKO YASUTOSHI
分类号 G03F7/20;H01L21/027;(IPC1-7):H01L21/027 主分类号 G03F7/20
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