| 摘要 |
PURPOSE: A method for forming a semiconductor device is provided to improve topography of a capacitor by using a plug for connecting an upper electrode pad as an upper electrode, and to stably fabricate the device by increasing a process margin of a chemical mechanical polishing process regarding a metal insulation layer. CONSTITUTION: A pre-metal insulation layer(21) is formed on a substrate(20). A lower electrode(220,230) is formed on the pre-metal insulation layer. A dielectric layer is formed on one part of the upper surface of the lower electrode. A metal insulation layer is formed and planarized on the pre-metal insulation layer to cover the dielectric layer and the lower electrode. A predetermined portion of the metal insulation layer is eliminated to form an opening exposing the upper surface of the dielectric layer and a via hole exposing the other part of the upper surface of the lower electrode where the dielectric layer is not formed. The first and second plugs(270,271) are filled in the opening and the via hole, respectively.
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