SEMICONDUCTOR INTEGRATED CIRCUIT AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To improve reliability of a ferroelectric capacitor. SOLUTION: An oxide film mask 16A is used for forming an upper electrode 14A and left as it is after the upper electrode 14A is formed. An oxide film mask 22A and a photoresist mask 24 are used for forming a lower electrode 10A and a ferroelectric film 12A. The oxide film mask 22A is left as it is after the lower electrode 10A is formed. As a result, the lower electrode 10A and the upper electrode 14A are prevented from short-circuit which is to be caused by residue, and reliability of a ferroelectric capacitor can be improved.