发明名称 |
Process for lift off and transfer of semiconductor devices onto an alien substrate |
摘要 |
The method of the invention causes fracture of a semiconductor layer containing semiconductor devices from a support layer and requires no masking of the semiconductor device features during an implantation action. The method initially implants protons throughout an entirety of the semiconductor layer at an energy level that enables the protons to reach a depth that defines a delamination region. The implanting creating defects in the semiconductor devices and charge accumulation in dielectric portions (if any). Next a heat treating step causes a delamination of the semiconductor layer from the support layer that lies beneath the delamination region. Then the semiconductor layer is annealed at a temperature that exceeds a thermal stability temperature of the defects to cause a healing thereof.
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申请公布号 |
US6346459(B1) |
申请公布日期 |
2002.02.12 |
申请号 |
US20000496597 |
申请日期 |
2000.02.02 |
申请人 |
SILICON WAFER TECHNOLOGIES, INC. |
发明人 |
USENKO ALEXANDER Y;CARR WILLIAM N. |
分类号 |
H01L21/301;H01L21/762;(IPC1-7):H01L21/30;H01L21/46 |
主分类号 |
H01L21/301 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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