发明名称 |
METHOD AND APPARATUS FOR MANUFACTURING COMPOUND OXIDE THIN FILM |
摘要 |
<p>PURPOSE: To provide a method and an apparatus for manufacturing a compound oxide thin film, which can efficiently manufacture a compound oxide thin film with high reliability besides high dielectric constant, using a cheap material without requiring a complicated process. CONSTITUTION: This method for forming the compound oxide thin film comprises directly introducing a metal compound solution 10 of a sprayed condition by two fluid nozzle 2 into a film forming chamber 3 kept under pressure of 100 Torr or less. The gas used for the two hydraulic nozzles comprises a gas including oxidizing gas. A solvent for dissolving a metal compound comprises having a boiling point of 100°C or more under a normal pressure.</p> |
申请公布号 |
KR20020010547(A) |
申请公布日期 |
2002.02.04 |
申请号 |
KR20010045476 |
申请日期 |
2001.07.27 |
申请人 |
MURATA MANUFACTURING CO., LTD. |
发明人 |
TAKESHIMA YUTAKA |
分类号 |
C01G1/00;C01G23/00;C23C4/12;C23C16/40;C23C16/44;C23C16/448;C23C16/455;H01G4/12;H01L21/31;H01L21/314;H01L21/316;H01M4/04;(IPC1-7):C23C16/40 |
主分类号 |
C01G1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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