| 摘要 |
<p>A method for forming metallizations for semiconductor devices, in accordance with the present invention, includes forming trenches (107) in a dielectric layer (104), depositing a single layer diffusion barrier (116) in the trenches, and without an air-brake, depositing a seed layer (118) of metal on the surface of the diffusion barrier. The trenches are then filled with metal (120). The metal adheres to the seed layer, which adheres to the diffusion barrier to provide many improvements in electrical characteristics as well as to reduce failures in the semiconductor devices.</p> |
