| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a method for manufacturing the device capable of eliminating a potential instability at a body part of a MOS transistor formed on an element forming region and assuring a current large enough for a size of the formed transistor. SOLUTION: A gate electrode 23 is provided on the element forming region 21 via an insulating film 40. A shallow source region 27 is formed at one side of the electrode 23 and drain region 29 is formed at the other. A body contact part 30 is provided at an outside of the region 27 and is connected to the body part 28.
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