SEMICONDUCTOR MULTILAYER SYSTEM AND A METHOD FOR PRODUCING A SEMICONDUCTOR MULTILAYER SYSTEM WITH INCREASED RESISTANCE TO THERMAL PROCESSING

摘要

The invention relates to a semiconductor multilayer system (40) comprising an active region consisting of at least two layers of different semiconductors, which have a band-offset on one boundary surface. Doping materials are present, or are to be introduced predominantly on one doping side (46) of the boundary surface (48) and on the opposing side of the boundary surface, a potential well (50) with quantized energy levels for charge carriers, is provided or is formed. Said multilayer system is characterized in that either at least one hetero-junction is provided on the doping side (46), in a region lying between the doping materials and the boundary surface (48), or several hetero-junctions are present on the doping side. The invention also relates to a corresponding production method.