| 发明名称 |
FORMATION OF AIR GAP STRUCTURES FOR INTER-METAL DIELECTRIC APPLICATION |
| 摘要 |
<p>A method for the formation of an air gap structure for use in inter-metal applications. A metal pattern of metal lines is formed, a layer of Plasma Polymerized Methylsilane (PPMS) resist is deposited on top of this pattern. The surface of the PPMS resist is subjected to selective exposure. The unexposed PPMS is removed after which the process is completed by closing up the openings within the PPMS.</p> |
| 申请公布号 |
SG84559(A1) |
申请公布日期 |
2001.11.20 |
| 申请号 |
SG20000000132 |
申请日期 |
2000.01.11 |
| 申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD |
发明人 |
SOO CHOI PHENG;TEE KHENG CHOK;ONG KOK KENG;LAP CHAN |
| 分类号 |
H01L21/768;H01L23/522;(IPC1-7):H01L21/31;H01L21/469 |
主分类号 |
H01L21/768 |
| 代理机构 |
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代理人 |
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| 主权项 |
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