| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem of deterioration of transistor characteristics that a in a method for manufacturing a semiconductor device which carries out a self-aligning contact technique, if an offset insulation film, a side wall insulation film, an etching stopper film and the like are formed with a silicon nitride film, there occurs piercing into a substrate made of boron with hydrogen generated when a film is formed. SOLUTION: In a method for manufacturing a semiconductor device which comprises the step of forming an offset insulation film 18 to be used when a self-aligning contact is formed with a silicon nitride film 17, this manufacturing method further comprises the step that, before the offset insulation film 18 is formed, a hydrogen stopper layer 16 is formed on a surface in which the offset insulation film 18 is formed. |
