| 摘要 |
PROBLEM TO BE SOLVED: To provide semiconductor device capable of reducing the influence of noise from a signal line receiving a pair of complementary data lines. SOLUTION: An IO line 11 is formed on a silicon board 1. A silicon oxidation film 3 is formed so as to bury the IO line. A silicon oxidation film 4 is interposed on the silicon oxidation film 3, and arranged so that an IOB line 12 is overlapped on the IO line 11 in a plane. The signal lines 13, 14 are arranged at a height position between the position of the IO line 11 and the position of the IOB line 12. |
