发明名称 SEMICONDUCTOR MEMORY
摘要 PROBLEM TO BE SOLVED: To solve the problem that a defective sense amplifier and a defective memory cell having no capability with respect to write-recovery time tDPL cannot be detected easily. SOLUTION: This device is provided with plural memory cells arranged in a matrix state, and word lines selecting one row out of plural memory cells, and defective sense amplifier and a defective memory cell having no capability for a recovery time tDPL are detected by quickening non-selection timing of a word line at the time of a test.
申请公布号 JP2001307499(A) 申请公布日期 2001.11.02
申请号 JP20000122901 申请日期 2000.04.24
申请人 NEC CORP 发明人 KOSHIKAWA KOJI
分类号 G06F12/16;G11C11/401;G11C29/50;(IPC1-7):G11C29/00 主分类号 G06F12/16
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