| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent deterioration of characteristics of a thin film transistor using a polycrystalline silicon film caused by exposure to a resist removing solution in a resist removing step. SOLUTION: An ozone-contained water is brought into contact with the surface of a polycrystalline silicon film 2 to form a surface oxide layer 3 thereon, a predetermined pattern of the mask 4 is formed on the polysilicon film 2 directly or via another film, etching or impurity ion implantation is carried out using the mask 4 to remove the mask 4 under a condition that the surface oxide layer 3 is formed on a surface of the at least exposed polysilicon film 2, thereby obtaining a thin film transistor excellent in characteristics and reliability.</p> |
