| 摘要 |
PROBLEM TO BE SOLVED: To realize an active matrix panel in which unit cells of a drive circuit can have a narrow pitch by optimizing the layout of thin-film transistors of a shift register. SOLUTION: In a source line drive circuit 40 of the active matrix panel, TFT's forming clocked inverters 3a and 4a of a unit shift register A1 are formed in thin-film transistor formation regions 300a to 300d. In these transistor formation regions, the thin film transistor formation regions having thin film transistors of different conductivities formed therein are positioned at their one end sides close to each other and are positioned at the other end in opposite directions. For this reason, the thin film transistors are biased for each conductivity and a unit shift register formation pitch P2 can be made narrow. |
