| 摘要 |
An improved method for rapid thermal processing of a semiconductor wafer. The method adds a significant conductive heat transfer component to a semiconductor process, which changes the temperature of a semiconductor wafer. The method can include the introduction of a thermally conductive gas, such as He or H2, into the processing chamber during processing of a semiconductor wafer. Once the wafer is disposed in the chamber, the thermally conductive gas acts to conduct heat from the walls of the chamber to the wafer surface, to heat the wafer. Alternatively, as the wafer is removed from the hot processing chamber and moved into an adjoining loadlock, the thermally conductive gas can act as a heat transfer conduit between the hot wafer and the relatively cooler walls of the loadlock to cool the wafer.
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