发明名称 Lumineszenzdiodenchip und Verfahren zu dessen Herstellung
摘要 The invention relates to a high-radiance LED chip (1) comprising a radiation-emitting active region (32) and a window layer (2). In order to increase the radiant yield, the cross-sectional surface of the radiation-emitting active region (32) is smaller than the cross-sectional surface of the window layer (2), which is made available for disengaging the light. The invention also relates to a method for producing a lens structure on the surface of a light emitting component.
申请公布号 DE10019665(A1) 申请公布日期 2001.10.31
申请号 DE2000119665 申请日期 2000.04.19
申请人 OSRAM OPTO SEMICONDUCTORS GMBH & CO. OHG 发明人 BOGNER, GEORG;STATH, NORBERT;NIRSCHL, ERNST;OBERSCHMID, REIMUND;KUGLER, SIEGMAR;SCHOENFELD, OLAF;NEUMANN, GERALD;SCHLERETH, KARL-HEINZ
分类号 H01L33/02;H01L33/08;H01L33/14;H01L33/20;H01L33/44;(IPC1-7):H01L33/00 主分类号 H01L33/02
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