| 摘要 |
PURPOSE: To define proper use of a transverse structure about applications by defining an correlation between Δn and a transverse mode in a semiconductor laser light emitting device which has a buried ridge structure in a semiconductor film. CONSTITUTION: In this semiconductor laser light emitting device 1, a laminated film 23 wherein group III nitride semiconductor films which include at least one kind of element out of Al, Ga, In and B are laminated is arranged, an upper part of the laminated film 23 is formed in a ridge type stripe 24, and current not-injected regions 32 at least a part of which regions are composed of material expressed by a chemical formula AlxGa1-xN (where, 0<=x<=1.0) are arranged on both sides of the ridge-shaped stripe 24. In the device 1, an index guide type is constituted by setting x as 0.3<=x<=1.0, a weak index type is constituted by setting x as 0.15<x<0.30, and a gain guide type is constituted by setting x as 0<=x<=0.15.
|
