| 摘要 |
PROBLEM TO BE SOLVED: To realize a channel concentration profile of a pMOSFET having a metal gate electrode structure and a buried channel structure as desired. SOLUTION: The p channel MOSFET comprises a channel region having the channel profile of the buried channel structure having a source and drain region 13 and counter layer formed in a semiconductor layer 11, gate insulation film 17 formed on the channel region, and metal gate electrode 18 wherein a metal whose work function value is near the center of the band gap of silicon is used at least in a part on the gate insulation side, The nitrogen concentration in the gate insulation film is not less than 2%.
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