| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit performing proper operation at a low power source voltage. SOLUTION: This circuit is composed of MOS transistors with two types of thresholds (REC4 of diagram 3 and diagrams 17 to 20), and the MOS transistor (e.g. TN7 of REC4 of diagram 3) in which the absolute value of a threshold voltage is low between the MOS transistors with two types of thresholds being used for a transfer gate included in the circuit. The MOS transistor, with the threshold voltage whose absolute value is small between the MOS transistors with two types of thresholds further, has a characteristic that a subthreshold current is made to flow, when voltage between the gate and the source is set to 0 V. Signal loss of the transfer gate is reduced, by using the MOS transistor whose threshold voltage is small for the transfer gate.
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